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low power dual operational amplifiers as358/358a 1 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet general description the as358/358a consist of two independent, high gain and internally frequency compensated operational amplifiers, they are specifi cally designed to operate from a single power supply. operation from split power supply is also possible and the low power sup- ply current drain is independent of the magnitude of the power supply voltages. typical applications include transducer amplifiers, dc gain blocks and most conventional operational amplifier circuits. the as358/358a series are compatible with industry standard 358. as358a has more stringent input offset voltage than as358. the as358 is availabl e in dip-8, tdip-8, soic-8, tssop-8 and msop-8 packag es, as358a is available in dip-8 and soic-8 packages. features internally frequency compensated for unity gain large voltage gain: 100db (typical) low input bias current: 20na (typical) low input offset voltage: 2mv (typical) low supply current: 0.5ma (typical) wide power supply voltage: single supply: 3v to 36v dual supplies: 1.5v to 18v input common mode voltage range includes ground large output voltage swing: 0v to v cc -1.5v applications battery charger cordless telephone switching power supply figure 1. package types of as358/358a soic-8 tssop-8 dip-8 msop-8 tdip-8
low power dual operational amplifiers as358/358a 2 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet (each amplifier) (soic-8/tssop-8/msop-8) figure 2. pin configuration of as358/358a (top view) m/g/mm package figure 3. functional block diagram of as358/358a q2 q4 q3 q1 q8 q9 6 a 4 a q10 q11 50 a q5 q6 q13 rsc cc 100 a q7 inputs + - output q12 v cc pin configuration output 1 input 1+ input 1- gnd v cc output 2 input 2- input 2+ 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 (dip-8/tdip-8) p/pt package functional block diagram output 1 input 1+ input 1- gnd v cc output 2 input 2- input 2+
low power dual operational amplifiers as358/358a 3 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet ordering information bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. package temperature range part number marking id packing type lead free green lead free green soic-8 -40 to 85 o c as358m-e1 as358m-g1 as358m-e1 as358m-g1 tube as358mtr-e1 as358mtr-g1 as358m-e1 as358m-g1 tape & reel as358am-e1 as358am-g1 as 358am-e1 as358am-g1 tube as358amtr-e1 as358amtr-g1 as35 8am-e1 as358am-g1 tape & reel dip-8 -40 to 85 o c as358p-e1 as358p-g1 as358p-e1 as358p-g1 tube as358ap-e1 as358ap-g1 as 358ap-e1 as358ap-g1 tube tdip-8 -40 to 85 o c as358pt-g1 as358pt-g1 tube tssop-8 -40 to 85 o c AS358GTR-E1 as358gtr-g1 eg3a gg3a tape & reel msop-8 -40 to 85 o c as358mmtr-e1 as358mmtr-g1 as358mm-e1 as358mm-g1 tape & reel circuit type package e1: lead free g1: green as358 tr: tape and reel blank: tube m: soic-8 p: dip-8 - blank: as358 a: as358a g: tssop-8 mm: msop-8 pt: tdip-8
low power dual operational amplifiers as358/358a 4 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet parameter symbol value unit power supply voltage v cc 40 v differential input voltage v id 40 v input voltage v ic -0.3 to 40 v power dissipation (t a =25 o c) p d dip-8 830 mw soic-8 550 tssop-8 500 msop-8 470 operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c note 1: stresses greater than those li sted under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. ex posure to "absolute maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) recommended operating conditions parameter symbol min max unit supply voltage v cc 336v ambient operating temperature range t a -40 85 o c
low power dual operational amplifiers as358/358a 5 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet limits in standard typeface are for t a =25 o c, bold typeface applies over -40 o c to 85 o c (note 2), v cc =5v, gnd=0v, unless otherwise specified. electrical characteristics parameter symbol test conditions min typ max unit input offset voltage v io v o =1.4v, r s =0 , v cc =5v to 30v as358 25 mv 7 as358a 23 5 average temperature coeffi- cient of input offset voltage v io / t t a =-40 to 85 o c 7 v/ o c input bias current i bias i in + or i in -, v cm =0v 20 200 na 200 input offset current i io i in + - i in -, v cm =0v 530 na 100 input common mode voltage range (note 3) v ir v cc =30v 0 v cc -1.5 v supply current i cc t a =-40 to 85 o c, r l = , v cc =30v 0.7 2 ma t a =-40 to 85 o c, r l = , v cc =5v 0.5 1.2 large signal voltage gain g v v cc =15v, v o =1v to 11v, r l 2 k 85 100 db 80 common mode rejection ratio cmrr dc, v cm =0v to (v cc -1.5)v 60 70 db 60 power supply rejection ratio psrr v cc =5v to 30v 70 100 db 60 channel separation cs f=1khz to 20khz -120 db output current source i source v in +=1v, v in -=0v, v cc =15v, v o =2v 20 40 ma 20 sink i sink v in +=0v, v in -=1v, v cc =15v, v o =2v 10 15 ma 5 v in +=0v,v in -=1v,v cc =15v, v o =0.2v 12 50 a output short circuit current to ground i sc v cc =15v 40 60 ma output voltage swing v oh v cc =30v, r l =2k 26 v 26 v cc =30v, r l =10k 27 28 27 v ol v cc =5v, r l = 10k 520 mv 30 thermal resistance (junction to case) jc dip-8 53 o c/w soic-8 78 note 2: limits over the full temperature are guaranteed by design, but not tested in production.
low power dual operational amplifiers as358/358a 6 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet typical performance characteristics 0 5 10 15 0 5 10 15 positive negative input voltage (+ v dc ) power supply voltage (+ v dc ) figure 4. input voltage range figure 5. input current figure 6. supply current figure 7. voltage gain -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 20 input current (na) temperature ( o c) 0 5 10 15 20 25 30 35 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 supply current (ma) supply voltage (v) 0 8 16 24 32 40 60 75 90 105 120 power supply voltage (v) voltage gain (db) r l =2k r l =20k electrical characteristics (continued) note 3: the input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3v (at 25 o c ). the upper end of the common-mode voltage range is v cc -1.5v (at 25 o c ), but either or both inputs can go to +36v without damages, independent of the magnitude of the v cc .
low power dual operational amplifiers as358/358a 7 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet figure 8. open loop frequency response fi gure 9. voltage follower pulse response input time ( s) output voltage (v) voltage (v) figure 10. voltage follower pulse response (small signal) time ( s) output voltage (mv) figure 11. large signal frequency response 1 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 110 120 voltage gain (db) frequency (hz) typical performance ch aracteristics (continued) 04 812 16 20 100 200 300 400 500 600 700 800 0 4 8 1216202428323640 0 1 2 3 1 2 3 4 0 1k 10k 100k 1m 0 5 10 15 20 frequency (hz) output swing (v)
low power dual operational amplifiers as358/358a 8 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet figure 12. output characteristics : current sourcing figure 14. current limiting figure 13. output characteristics : current sinking -25 0 25 50 75 100 125 0 10 20 30 40 50 60 70 80 90 100 output current (ma) temperature ( o c) typical performance ch aracteristics (continued) 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 10 v cc =15v output voltage (v) output sink current (ma) v cc =5v 0.1 1 10 100 0 1 2 3 4 5 6 7 8 output voltage referenced to vcc (v) output source current (ma)
low power dual operational amplifiers as358/358a 9 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet figure 17. dc summing amplifier figure 16. power amplifier figure 15. battery charger r6 100k v o r5 100k r1 100k r2 100k r3 100k r4 100k +v 1 +v 2 +v 3 +v 4 1/2 as358/a + - ac line smps r2 current sense r7 r8 battery pack r4 r3 az431 r5 r1 opto isolator v cc gnd gnd 1/2 as358/a + - 1/2 as358/a r6 + - v cc typical application r1 910k v o r2 100k r3 91k v in(+) v cc r l 1/2 as358/a - +
low power dual operational amplifiers as358/358a 10 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet figure 20. pulse generator figure 18. ac coupled non-inverting amplifier figure 21. dc coupled low-pass active filter figure 19. fixed current sources v cc r4 3k r3 2k + - 2v + - 2v i1 i2 1ma 1/2 as358/a r1 2k r2 - + r5 100k r3 100k r2 100k r1 1m v o v cc 1/2 as358/a 0.001 f - + r4 100k typical applicat ion (continued) v o r2 16k r1 16k v in r3 100k 1/2 as358/a r4 100k c2 0.01 f c1 0.01 f f o v o 0 f o =1khz q=1 a v =2 + - r4 100k v cc r3 1m r1 100k r2 1m c1 0.1 f c in r5 100k c o v o 1/2 as358/a r l 10k c2 10 f a v =1+r2/r1 a v =11 (as shown) - + ac r b 6.2k
low power dual operational amplifiers as358/358a 11 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet mechanical dimensions dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.600(0.378) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ note: eject hole, oriented hole and mold mark is optional.
low power dual operational amplifiers as358/358a 12 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet mechanical dimens ions (continued) tdip-8 unit: mm(inch) 1.500(0.059) 1.700(0.067) 3.300(0.130)max 0.600(0.024) 0.800(0.031) 0.940(0.037) 1.040(0.041) 1.470(0.058) 1.670(0.066) 2.540(0.100) bcs 3.100(0.122) 3.500(0.138) 7.570(0.298) 8.200(0.323) 8.200(0.323) 9.400(0.370) 9.150(0.360) 9.350(0.368) 6.250(0.246) 6.450(0.254) 0.500(0.020)min 0.390(0.015) 0.550(0.022) note: eject hole, oriented hole and mold mark is optional.
low power dual operational amplifiers as358/358a 13 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet mechanical dimens ions (continued) soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
low power dual operational amplifiers as358/358a 14 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet mechanical dimens ions (continued) tssop-8 unit: mm(inch) 4.300(0.169) 0.400(0.016) 0.190(0.007) 0.300(0.012) see detail a detail a 2.900(0.114) 0.050(0.002) 0.150(0.006) 1.200(0.047) max 1.950(0.077) 0 8 12 top & bottom r0.090(0.004) 0.450(0.018) 0.750(0.030) 1.000(0.039) 6.400(0.252) 0.800(0.031) 1.050(0.041) 0.090(0.004) 0.200(0.008) gage plane seating plane 0.250(0.010) 3.100(0.122) 4.500(0.177) typ 0.650(0.026) typ typ typ r0.090(0.004) ref note: eject hole, oriented hole and mold mark is optional.
low power dual operational amplifiers as358/358a 15 bcd semiconductor manufacturing limited jan. 2013 rev. 2. 2 data sheet msop-8 unit: mm(inch) mechanical dimens ions (continued) 4.700(0.185) 0.650(0.026)typ 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 0.300(0.012)typ 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 ) 0 . 8 0 0 ( 0 . 0 3 1 ) 1 . 2 0 0 ( 0 . 0 4 7 ) 3.100(0.122) 2.900(0.114) 0 6 0 . 1 5 0 ( 0 . 0 0 6 ) t y p 0 . 7 6 0 ( 0 . 0 3 0 ) 0 . 9 7 0 ( 0 . 0 3 8 ) ` note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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